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Product details

MRF586

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - RF
Package: Bulk

Description

RF Transistor NPN 17V 200mA 3GHz 1W Through Hole TO-39

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 3GHz
Gain: 13.5dB
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Noise Figure (dB Typ @ f): -
Operating Temperature: -
Package: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Power - Max: 1W
Series: -
Supplier Device Package: TO-39
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 17V