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Product details

0912-25

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - RF
Package: Bulk

Description

RF Transistor NPN 55V 2.5A 960MHz ~ 1.215GHz 125W Chassis Mount 55CT

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Gain: 8.5dB ~ 10dB
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
Noise Figure (dB Typ @ f): -
Operating Temperature: 200°C (TJ)
Package: Bulk
Package / Case: 55CT
Power - Max: 125W
Series: -
Supplier Device Package: 55CT
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V