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Product details

0910-60M

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - RF
Package: Bulk

Description

RF Transistor NPN 65V 8A 890MHz ~ 1GHz 180W Chassis Mount 55AW

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: 890MHz ~ 1GHz
Gain: 8dB ~ 8.5dB
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
Noise Figure (dB Typ @ f): -
Operating Temperature: 200°C (TJ)
Package: Bulk
Package / Case: 55AW
Power - Max: 180W
Series: -
Supplier Device Package: 55AW
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V