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Product details

0910-60M

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - RF
Package
Bulk

Description

RF Transistor NPN 65V 8A 890MHz ~ 1GHz 180W Chassis Mount 55AW

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Frequency - Transition
890MHz ~ 1GHz
Gain
8dB ~ 8.5dB
Mfr
Microsemi Corporation
Mounting Type
Chassis Mount
Noise Figure (dB Typ @ f)
-
Operating Temperature
200°C (TJ)
Package
Bulk
Package / Case
55AW
Power - Max
180W
Series
-
Supplier Device Package
55AW
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
65V