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Product details

0204-125

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - RF
Package: Bulk

Description

RF Transistor NPN 60V 16A 225MHz ~ 400MHz 270W Chassis Mount 55JT

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 16A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 225MHz ~ 400MHz
Gain: 7dB ~ 8.5dB
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
Noise Figure (dB Typ @ f): -
Operating Temperature: 200°C (TJ)
Package: Bulk
Package / Case: 55JT
Power - Max: 270W
Series: -
Supplier Device Package: 55JT
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V