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Product details

MS2472

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - RF
Package: Bulk

Description

RF Transistor NPN 65V 40A 1.025GHz ~ 1.15GHz 1350W Chassis Mount M112

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 40A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Gain: 5.6dB
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
Noise Figure (dB Typ @ f): -
Operating Temperature: 200°C (TJ)
Package: Bulk
Package / Case: M112
Power - Max: 1350W
Series: -
Supplier Device Package: M112
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V