Microsemi Corporation
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Product details
PN5179
Availability on request
Description
RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole TO-92-3
Datasheet
Not provided
Specifications
- Base Product Number
- PN517
- Current - Collector (Ic) (Max)
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 25 @ 3mA, 1V
- Frequency - Transition
- 2GHz
- Gain
- 15dB
- Mfr
- onsemi
- Mounting Type
- Through Hole
- Noise Figure (dB Typ @ f)
- 5dB @ 200MHz
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Bulk
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max
- 350mW
- Series
- -
- Supplier Device Package
- TO-92-3
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 12V