- Current - Continuous Drain (Id) @ 25°C
- 70mA (Ta)
- Drain to Source Voltage (Vdss)
- 200 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds
- 50 pF @ 25 V
- Mfr
- Diodes Incorporated
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Bulk
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Power Dissipation (Max)
- 625mW (Ta)
- Rds On (Max) @ Id, Vgs
- 80Ohm @ 50mA, 10V
- Series
- -
- Supplier Device Package
- TO-92
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA