18N10 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

18N10

Availability on request

Manufacturer: Goford Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: TO-252 (DPAK)

Description

N-Channel 100 V 25A 62.5W Surface Mount TO-252 (DPAK)

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 100 V
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
Mfr: Goford Semiconductor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 62.5W
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Series: -
Supplier Device Package: TO-252 (DPAK)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA