- Current - Continuous Drain (Id) @ 25°C
- 5.5A
- Drain to Source Voltage (Vdss)
- 60 V
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 2.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 765 pF @ 30 V
- Mfr
- Goford Semiconductor
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation (Max)
- 960mW
- Rds On (Max) @ Id, Vgs
- 42mOhm @ 3A, 10V
- Series
- -
- Supplier Device Package
- SOT-23-3L
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA