FDU8882 product image

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Product details

FDU8882

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: I-PAK

Description

N-Channel 30 V 12.6A (Ta), 55A (Tc) 55W (Tc) Through Hole I-PAK

Datasheet View datasheet

Specifications

Base Product Number: FDU88
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 55A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 35A, 10V
Series: PowerTrench®
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA