STD12N60DM2AG product image

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Product details

STD12N60DM2AG

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: D-PAK (TO-252)

Description

N-Channel 600 V 10A (Tc) 110W (Tc) Surface Mount D-PAK (TO-252)

Datasheet View datasheet

Specifications

Base Product Number: STD12
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
Mfr: STMicroelectronics
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Series: Automotive, AEC-Q101, MDmesh™ DM2
Supplier Device Package: D-PAK (TO-252)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 5V @ 250µA