SIRA12BDP-T1-GE3 product image

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Product details

SIRA12BDP-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 30 V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8

Datasheet View datasheet

Specifications

Base Product Number: SIRA12
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: PowerPAK® SO-8
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Series: TrenchFET® Gen IV
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): +20V, -16V
Vgs(th) (Max) @ Id: 2.4V @ 250µA