IRF100P218XKMA1 product image

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Product details

IRF100P218XKMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247AC

Description

N-Channel 100 V 209A (Tc) 556W (Tc) Through Hole TO-247AC

Datasheet View datasheet

Specifications

Base Product Number: IRF100
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 556W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Series: StrongIRFET™
Supplier Device Package: TO-247AC
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.8V @ 278µA