SSM3K2615TU,LF product image

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Product details

SSM3K2615TU,LF

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: UFM

Description

N-Channel 60 V 2A (Ta) 800mW (Ta) Surface Mount UFM

Datasheet Not provided

Specifications

Base Product Number: SSM3K2615
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 150°C
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 3-SMD, Flat Leads
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Series: π-MOSV
Supplier Device Package: UFM
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA