IRF5803D2PBF product image

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Product details

IRF5803D2PBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: 8-SO

Description

P-Channel 40 V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: Schottky Diode (Isolated)
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Series: FETKY™
Supplier Device Package: 8-SO
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA