IRF7464TRPBF product image

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Product details

IRF7464TRPBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 200 V 1.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 730mOhm @ 720mA, 10V
Series: HEXFET®
Supplier Device Package: 8-SO
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5.5V @ 250µA