IRF9Z14SPBF product image

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Product details

IRF9Z14SPBF

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: D²PAK (TO-263)

Description

P-Channel 60 V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

Datasheet View datasheet

Specifications

Base Product Number: IRF9Z14
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Series: -
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA