IRLML6302TRPBF product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IRLML6302TRPBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Micro3™/SOT-23

Description

P-Channel 20 V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23

Datasheet View datasheet

Specifications

Base Product Number: IRLML6302
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Series: HEXFET®
Supplier Device Package: Micro3™/SOT-23
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.5V @ 250µA