DMN10H170SFDE-7 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

DMN10H170SFDE-7

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: U-DFN2020-6 (Type E)

Description

N-Channel 100 V 2.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Datasheet View datasheet

Specifications

Base Product Number: DMN10
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Series: -
Supplier Device Package: U-DFN2020-6 (Type E)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA