SQD50P08-28_GE3 product image

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Product details

SQD50P08-28_GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: TO-252AA

Description

P-Channel 80 V 48A (Tc) 136W (Tc) Surface Mount TO-252AA

Datasheet View datasheet

Specifications

Base Product Number: SQD50
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V
Series: Automotive, AEC-Q101, TrenchFET®
Supplier Device Package: TO-252AA
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA