IPB032N10N5ATMA1 product image

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Product details

IPB032N10N5ATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO263-7

Description

N-Channel 100 V 166A (Tc) 187W (Tc) Surface Mount PG-TO263-7

Datasheet View datasheet

Specifications

Base Product Number: IPB032
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TO263-7
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.8V @ 125µA