TSM2N60SCW RPG product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

TSM2N60SCW RPG

Availability on request

Manufacturer: Taiwan Semiconductor Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: SOT-223

Description

N-Channel 600 V 600mA (Tc) 2.5W (Tc) Surface Mount SOT-223

Datasheet View datasheet

Specifications

Base Product Number: TSM2
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
Mfr: Taiwan Semiconductor Corporation
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-261-4, TO-261AA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 600mA, 10V
Series: -
Supplier Device Package: SOT-223
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA