TSM2N100CH C5G product image

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Product details

TSM2N100CH C5G

Availability on request

Manufacturer: Taiwan Semiconductor Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 1000 V 1.85A (Tc) 77W (Tc) Through Hole TO-251 (IPAK)

Datasheet View datasheet

Specifications

Base Product Number: TSM2N100
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Drain to Source Voltage (Vdss): 1000 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Mfr: Taiwan Semiconductor Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Series: -
Supplier Device Package: TO-251 (IPAK)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5.5V @ 250µA