TSM10NC65CF C0G product image

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Product details

TSM10NC65CF C0G

Availability on request

Manufacturer: Taiwan Semiconductor Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: ITO-220S

Description

N-Channel 650 V 10A (Tc) 45W (Tc) Through Hole ITO-220S

Datasheet View datasheet

Specifications

Base Product Number: TSM10
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 50 V
Mfr: Taiwan Semiconductor Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Series: -
Supplier Device Package: ITO-220S
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4.5V @ 250µA