TSM10N80CZ C0G product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

TSM10N80CZ C0G

Availability on request

Manufacturer: Taiwan Semiconductor Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 800 V 9.5A (Tc) 290W (Tc) Through Hole TO-220

Datasheet View datasheet

Specifications

Base Product Number: TSM10
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2336 pF @ 25 V
Mfr: Taiwan Semiconductor Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.75A, 10V
Series: -
Supplier Device Package: TO-220
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA