HUF75639P3-F102 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

HUF75639P3-F102

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220-3

Description

N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole TO-220-3

Datasheet View datasheet

Specifications

Base Product Number: HUF75639
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Series: -
Supplier Device Package: TO-220-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA