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Product details

DMN3110LCP3-7

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: X2-DFN1006-3

Description

N-Channel 30 V 3.2A (Ta) 1.38W Surface Mount X2-DFN1006-3

Datasheet Not provided

Specifications

Base Product Number: DMN3110
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 3-XFDFN
Power Dissipation (Max): 1.38W
Rds On (Max) @ Id, Vgs: 69mOhm @ 500mA, 8V
Series: -
Supplier Device Package: X2-DFN1006-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): 12V
Vgs(th) (Max) @ Id: 1.1V @ 250µA