- Base Product Number
- STB12
- Current - Continuous Drain (Id) @ 25°C
- 10.5A (Tc)
- Drain to Source Voltage (Vdss)
- 800 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 87 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 2620 pF @ 25 V
- Mfr
- STMicroelectronics
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max)
- 190W (Tc)
- Rds On (Max) @ Id, Vgs
- 750mOhm @ 5.25A, 10V
- Series
- SuperMESH™
- Supplier Device Package
- D2PAK
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±30V
- Vgs(th) (Max) @ Id
- 4.5V @ 100µA