IRFB3307 product image

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Product details

IRFB3307

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220AB

Description

N-Channel 75 V 130A (Tc) 250W (Tc) Through Hole TO-220AB

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 75 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V
Series: HEXFET®
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 150µA