IPW60R180P7XKSA1 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IPW60R180P7XKSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO247-3

Description

N-Channel 650 V 18A (Tc) 72W (Tc) Through Hole PG-TO247-3

Datasheet View datasheet

Specifications

Base Product Number: IPW60R180
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Series: CoolMOS™ P7
Supplier Device Package: PG-TO247-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 280µA