IRLIB4343 product image

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Product details

IRLIB4343

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 55 V 19A (Tc) 39W (Tc) Through Hole TO-220AB Full-Pak

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Series: HEXFET®
Supplier Device Package: TO-220AB Full-Pak
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1V @ 250µA