NTMS4P01R2 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTMS4P01R2

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: 8-SOIC

Description

P-Channel 12 V 3.4A (Ta) 790mW (Ta) Surface Mount 8-SOIC

Datasheet View datasheet

Specifications

Base Product Number: NTMS4P
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 12 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 9.6 V
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 790mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Series: -
Supplier Device Package: 8-SOIC
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 1.15V @ 250µA