STW11NK100Z product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

STW11NK100Z

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247-3

Description

N-Channel 1000 V 8.3A (Tc) 230W (Tc) Through Hole TO-247-3

Datasheet View datasheet

Specifications

Base Product Number: STW11
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
Drain to Source Voltage (Vdss): 1000 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 4.15A, 10V
Series: SuperMESH™
Supplier Device Package: TO-247-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4.5V @ 100µA