IRF620 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IRF620

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220

Description

N-Channel 200 V 6A (Tc) 70W (Tc) Through Hole TO-220

Datasheet View datasheet

Specifications

Base Product Number: IRF6
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 10V
Series: PowerMESH™ II
Supplier Device Package: TO-220
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA