IPU80R1K4P7AKMA1 product image

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Product details

IPU80R1K4P7AKMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO251-3-21

Description

N-Channel 800 V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3-21

Datasheet View datasheet

Specifications

Base Product Number: IPU80R1
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: Super Junction
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Series: CoolMOS™
Supplier Device Package: PG-TO251-3-21
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 700µA