SCT3022ALGC11 product image

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Product details

SCT3022ALGC11

Availability on request

Manufacturer: Rohm Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247N

Description

N-Channel 650 V 93A (Tc) 339W (Tc) Through Hole TO-247N

Datasheet View datasheet

Specifications

Base Product Number: SCT3022
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 18V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Mfr: Rohm Semiconductor
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 339W (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Series: -
Supplier Device Package: TO-247N
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +22V, -4V
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA