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Product details

STP12N65M2

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220

Description

N-Channel 650 V 8A (Tc) 85W (Tc) Through Hole TO-220

Datasheet View datasheet

Specifications

Base Product Number: STP12
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Series: MDmesh™ DM2
Supplier Device Package: TO-220
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 4V @ 250µA