SCT50N120 product image

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Product details

SCT50N120

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: HiP247™

Description

N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™

Datasheet View datasheet

Specifications

Base Product Number: SCT50
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 20V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 318W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V
Series: -
Supplier Device Package: HiP247™
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +25V, -10V
Vgs(th) (Max) @ Id: 3V @ 1mA