IPD90N06S4L05ATMA2 product image

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Product details

IPD90N06S4L05ATMA2

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO252-3-11

Description

N-Channel 60 V 90A (Tc) 107W (Tc) Surface Mount PG-TO252-3-11

Datasheet View datasheet

Specifications

Base Product Number: IPD90N
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Series: Automotive, AEC-Q101, OptiMOS™
Supplier Device Package: PG-TO252-3-11
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 2.2V @ 60µA