STW11NB80 product image

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Product details

STW11NB80

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247-3

Description

N-Channel 800 V 11A (Tc) 190W (Tc) Through Hole TO-247-3

Datasheet View datasheet

Specifications

Base Product Number: STW11N
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 5.5A, 10V
Series: PowerMESH™
Supplier Device Package: TO-247-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA