IRF60R217 product image

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Product details

IRF60R217

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: D-PAK (TO-252AA)

Description

N-Channel 60 V 58A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252AA)

Datasheet View datasheet

Specifications

Base Product Number: IRF60R217
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Series: StrongIRFET™
Supplier Device Package: D-PAK (TO-252AA)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.7V @ 50µA