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PSMN2R0-25YLDX product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

PSMN2R0-25YLDX

Availability on request

Manufacturer
Nexperia USA Inc.
Category
Transistors - FETs, MOSFETs - Single
Package
LFPAK56, Power-SO8

Description

N-Channel 25 V 100A (Tc) 115W (Tc) Surface Mount LFPAK56, Power-SO8

Specifications
Base Product Number
PSMN2R0
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drain to Source Voltage (Vdss)
25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Feature
Schottky Diode (Body)
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
34.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2485 pF @ 12 V
Mfr
Nexperia USA Inc.
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
SC-100, SOT-669
Power Dissipation (Max)
115W (Tc)
Rds On (Max) @ Id, Vgs
2.09mOhm @ 25A, 10V
Series
-
Supplier Device Package
LFPAK56, Power-SO8
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.2V @ 1mA