IPL60R2K1C6SATMA1 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IPL60R2K1C6SATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TSON-8-2

Description

N-Channel 600 V 2.3A (Tc) 21.6W (Tc) Surface Mount PG-TSON-8-2

Datasheet View datasheet

Specifications

Base Product Number: IPL60R
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 21.6W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Series: CoolMOS™ C6
Supplier Device Package: PG-TSON-8-2
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 60µA