IPD50R3K0CEAUMA1 product image

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Product details

IPD50R3K0CEAUMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO252-3

Description

N-Channel 500 V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3

Datasheet View datasheet

Specifications

Base Product Number: IPD50R3
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 13V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Series: CoolMOS™ CE
Supplier Device Package: PG-TO252-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 30µA