- Base Product Number
- SSM3K59
- Current - Continuous Drain (Id) @ 25°C
- 2A (Ta)
- Drain to Source Voltage (Vdss)
- 40 V
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 8V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 1.1 nC @ 4.2 V
- Input Capacitance (Ciss) (Max) @ Vds
- 130 pF @ 10 V
- Mfr
- Toshiba Semiconductor and Storage
- Mounting Type
- Surface Mount
- Operating Temperature
- 150°C (TJ)
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- 3-SMD, No Lead
- Power Dissipation (Max)
- 1W (Ta)
- Rds On (Max) @ Id, Vgs
- 215mOhm @ 1A, 8V
- Series
- U-MOSVII-H
- Supplier Device Package
- CST3B
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±12V
- Vgs(th) (Max) @ Id
- 1.2V @ 1mA