IXTH10N100D2 product image

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Product details

IXTH10N100D2

Availability on request

Manufacturer: IXYS
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247 (IXTH)

Description

N-Channel 1000 V 10A (Tc) 695W (Tc) Through Hole TO-247 (IXTH)

Datasheet View datasheet

Specifications

Base Product Number: IXTH10
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 1000 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: Depletion Mode
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Mfr: IXYS
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Series: Depletion
Supplier Device Package: TO-247 (IXTH)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: -