DMN10H099SFG-13 product image

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Product details

DMN10H099SFG-13

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: PowerDI3333-8

Description

N-Channel 100 V 4.2A (Ta) 980mW (Ta) Surface Mount PowerDI3333-8

Datasheet View datasheet

Specifications

Base Product Number: DMN10
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Series: -
Supplier Device Package: PowerDI3333-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA