IRF200B211 product image

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Product details

IRF200B211

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220AB

Description

N-Channel 200 V 12A (Tc) 80W (Tc) Through Hole TO-220AB

Datasheet View datasheet

Specifications

Base Product Number: IRF200
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Series: HEXFET®, StrongIRFET™
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.9V @ 50µA