DMN10H120SE-13 product image

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Product details

DMN10H120SE-13

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: SOT-223-3

Description

N-Channel 100 V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223-3

Datasheet View datasheet

Specifications

Base Product Number: DMN10
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-261-4, TO-261AA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Series: -
Supplier Device Package: SOT-223-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA