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Product details

IRLD120

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Datasheet Not provided

Specifications

Base Product Number: IRLD120
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Mfr: Vishay Siliconix
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 5V
Series: -
Supplier Device Package: 4-HVMDIP
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 250µA